The Thermal Growth of Very Thin SiO<inf>2</inf> Films A Diffusion‐Controlled Process

E. Farrés, J. Suñé, I. Placencia, N. Barniol, X. Aymerich

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Abstract

A new model to describe the thermal growth of thin SiO2 films is presented. The interface reaction is not considered as a limiting mechanism and the diffusion‐controlled oxidation yields a parabolic growth law. Fitting of the initial oxidation regime yields an underestimation of the growth rate when the oxide is thicker. To get an analytical oxidation law for both thickness ranges, the parabolic growth is smoothly linked with a linear‐parabolic law that fits the growth of thick oxides. Good fittings of the experimental data of SiO2 growth and of thetemperature dependence of the parabolic constant are obtained. The presented model has been used to relate the oxidation conditions to the microroughness of the SiO2 interfaces in VLSI‐MOS structures. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA
Original languageEnglish
Pages (from-to)167-175
Journalphysica status solidi (a)
Volume114
Issue number1
DOIs
Publication statusPublished - 1 Jan 1989

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