The statistics of set time of oxide-based resistive switching memory

Meiyun Zhang; Shibing Long; Guoming Wang; Zhaoan Yu; Yang Li; Dinglin Xu; Hangbing Lv; Qi Liu; Enrique Miranda; Jordi Sune; Ming Liu

doi:10.1109/IPFA.2016.7564324

The statistics of set time of oxide-based resistive switching memory

Meiyun Zhang, Shibing Long, Guoming Wang, Zhaoan Yu, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Enrique Miranda, Jordi Sune, Ming Liu

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

Abstract

In this paper, the characteristics of the set time (t_set) correlated with the initial off-state resistance (R_off) were studied using a statistical method based on a Ti/ZrO₂/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze t_set variation. Both the Weibull slope (β_t) and scale factor (t_set63%) of t_Set distributions increase logarithmically with R_off. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

Original language	English
Pages (from-to)	392-394
Number of pages	3
Journal	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2016.7564324
Publication status	Published - 9 Sept 2016

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title = "The statistics of set time of oxide-based resistive switching memory",

abstract = "In this paper, the characteristics of the set time (tset) correlated with the initial off-state resistance (Roff) were studied using a statistical method based on a Ti/ZrO2/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze tset variation. Both the Weibull slope (βt) and scale factor (tset63%) of tSet distributions increase logarithmically with Roff. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.",

author = "Meiyun Zhang and Shibing Long and Guoming Wang and Zhaoan Yu and Yang Li and Dinglin Xu and Hangbing Lv and Qi Liu and Enrique Miranda and Jordi Sune and Ming Liu",

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doi = "10.1109/IPFA.2016.7564324",

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T1 - The statistics of set time of oxide-based resistive switching memory

AU - Zhang, Meiyun

AU - Long, Shibing

AU - Wang, Guoming

AU - Yu, Zhaoan

AU - Li, Yang

AU - Xu, Dinglin

AU - Lv, Hangbing

AU - Liu, Qi

AU - Miranda, Enrique

AU - Sune, Jordi

AU - Liu, Ming

PY - 2016/9/9

Y1 - 2016/9/9

N2 - In this paper, the characteristics of the set time (tset) correlated with the initial off-state resistance (Roff) were studied using a statistical method based on a Ti/ZrO2/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze tset variation. Both the Weibull slope (βt) and scale factor (tset63%) of tSet distributions increase logarithmically with Roff. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

AB - In this paper, the characteristics of the set time (tset) correlated with the initial off-state resistance (Roff) were studied using a statistical method based on a Ti/ZrO2/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze tset variation. Both the Weibull slope (βt) and scale factor (tset63%) of tSet distributions increase logarithmically with Roff. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

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DO - 10.1109/IPFA.2016.7564324

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JO - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

JF - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

ER -

The statistics of set time of oxide-based resistive switching memory

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