The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures

N. V. Vostokov; S. A. Gusev; Yu N. Drozdov; Z. F. Krasilnik; D. N. Lobanov; N. Mesters; M. Miura; L. D. Moldavskaya; A. V. Novikov; J. Pascual; V. V. Postnikov; Y. Shiraki; V. A. Uakhimchuk; N. Usami; M. Ya Valakh

The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures

N. V. Vostokov, S. A. Gusev, Yu N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami, M. Ya Valakh

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth temperature is associated with an increase of Ge content in the islands. Enhancement of alloying and coarsening of islands grown at 750°C causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at this temperature.

Original language	English
Pages (from-to)	295-302
Journal	Physics of Low-Dimensional Structures
Volume	2001
Issue number	3-4
Publication status	Published - 1 Dec 2001

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Vostokov, N. V., Gusev, S. A., Drozdov, Y. N., Krasilnik, Z. F., Lobanov, D. N., Mesters, N., Miura, M., Moldavskaya, L. D., Novikov, A. V., Pascual, J., Postnikov, V. V., Shiraki, Y., Uakhimchuk, V. A., Usami, N., & Valakh, M. Y. (2001). The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures. Physics of Low-Dimensional Structures, 2001(3-4), 295-302.

Vostokov, N. V. ; Gusev, S. A. ; Drozdov, Yu N. ; Krasilnik, Z. F. ; Lobanov, D. N. ; Mesters, N. ; Miura, M. ; Moldavskaya, L. D. ; Novikov, A. V. ; Pascual, J. ; Postnikov, V. V. ; Shiraki, Y. ; Uakhimchuk, V. A. ; Usami, N. ; Valakh, M. Ya. / The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures. In: Physics of Low-Dimensional Structures. 2001 ; Vol. 2001, No. 3-4. pp. 295-302.

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title = "The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures",

abstract = "The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth temperature is associated with an increase of Ge content in the islands. Enhancement of alloying and coarsening of islands grown at 750°C causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at this temperature.",

author = "Vostokov, {N. V.} and Gusev, {S. A.} and Drozdov, {Yu N.} and Krasilnik, {Z. F.} and Lobanov, {D. N.} and N. Mesters and M. Miura and Moldavskaya, {L. D.} and Novikov, {A. V.} and J. Pascual and Postnikov, {V. V.} and Y. Shiraki and Uakhimchuk, {V. A.} and N. Usami and Valakh, {M. Ya}",

year = "2001",

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language = "English",

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Vostokov, NV, Gusev, SA, Drozdov, YN, Krasilnik, ZF, Lobanov, DN, Mesters, N, Miura, M, Moldavskaya, LD, Novikov, AV, Pascual, J, Postnikov, VV, Shiraki, Y, Uakhimchuk, VA, Usami, N & Valakh, MY 2001, 'The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures', Physics of Low-Dimensional Structures, vol. 2001, no. 3-4, pp. 295-302.

The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures. / Vostokov, N. V.; Gusev, S. A.; Drozdov, Yu N.; Krasilnik, Z. F.; Lobanov, D. N.; Mesters, N.; Miura, M.; Moldavskaya, L. D.; Novikov, A. V.; Pascual, J.; Postnikov, V. V.; Shiraki, Y.; Uakhimchuk, V. A.; Usami, N.; Valakh, M. Ya.

In: Physics of Low-Dimensional Structures, Vol. 2001, No. 3-4, 01.12.2001, p. 295-302.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures

AU - Vostokov, N. V.

AU - Gusev, S. A.

AU - Drozdov, Yu N.

AU - Krasilnik, Z. F.

AU - Lobanov, D. N.

AU - Mesters, N.

AU - Miura, M.

AU - Moldavskaya, L. D.

AU - Novikov, A. V.

AU - Pascual, J.

AU - Postnikov, V. V.

AU - Shiraki, Y.

AU - Uakhimchuk, V. A.

AU - Usami, N.

AU - Valakh, M. Ya

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth temperature is associated with an increase of Ge content in the islands. Enhancement of alloying and coarsening of islands grown at 750°C causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at this temperature.

AB - The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth temperature is associated with an increase of Ge content in the islands. Enhancement of alloying and coarsening of islands grown at 750°C causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at this temperature.

M3 - Article

VL - 2001

SP - 295

EP - 302

IS - 3-4

ER -