The Relation between Composition and Sizes of GeSi/Si(001) Islands Grown at Different Temperatures

N. V. Vostokov, S. A. Gusev, Yu N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami, M. Ya Valakh

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5 Citations (Scopus)

Abstract

The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth temperature is associated with an increase of Ge content in the islands. Enhancement of alloying and coarsening of islands grown at 750°C causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at this temperature.
Original languageEnglish
Pages (from-to)295-302
JournalPhysics of Low-Dimensional Structures
Volume2001
Issue number3-4
Publication statusPublished - 1 Dec 2001

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