Abstract
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
Original language | English |
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Pages (from-to) | 559-561 |
Journal | IEEE Electron Device Letters |
Volume | 23 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1 Sep 2002 |
Keywords
- Dielectric breakdown
- Hard breakdown
- Leakage currents
- MOS devices
- Oxide reliability
- Soft breakdown
- SRAM