The impact of gate-oxide breakdown SRAM stability

R. Rodríguez, J. H. Stathis, B. P. Linder, S. Kowalczyk, C. T. Chuang, R. V. Joshi, G. Northrop, K. Bernstein, A. J. Bhavnagarwala, S. Lombardo

    Research output: Contribution to journalArticleResearchpeer-review

    124 Citations (Scopus)

    Abstract

    We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
    Original languageEnglish
    Pages (from-to)559-561
    JournalIEEE Electron Device Letters
    Volume23
    Issue number9
    DOIs
    Publication statusPublished - 1 Sep 2002

    Keywords

    • Dielectric breakdown
    • Hard breakdown
    • Leakage currents
    • MOS devices
    • Oxide reliability
    • Soft breakdown
    • SRAM

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