Test of the TRAPPISTe monolithic detector system

L. Soung Yee; P. Álvarez; E. Martin; E. Cortina; C. Ferrer

doi:10.1016/j.nima.2013.03.052

Test of the TRAPPISTe monolithic detector system

L. Soung Yee, P. Álvarez, E. Martin, E. Cortina, C. Ferrer

Department of Microelectronics and Electronic Systems

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source. © 2013 Elsevier B.V.

Original language	English
Pages (from-to)	141-145
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	731
DOIs	https://doi.org/10.1016/j.nima.2013.03.052
Publication status	Published - 24 Apr 2013

Keywords

Monolithic
Pixel
SOI

Access to Document

10.1016/j.nima.2013.03.052

Cite this

@article{b5997d48d0b141969e3a5f94dce5311c,

title = "Test of the TRAPPISTe monolithic detector system",

abstract = "A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source. {\textcopyright} 2013 Elsevier B.V.",

keywords = "Monolithic, Pixel, SOI",

author = "{Soung Yee}, L. and P. {\'A}lvarez and E. Martin and E. Cortina and C. Ferrer",

year = "2013",

month = apr,

day = "24",

doi = "10.1016/j.nima.2013.03.052",

language = "English",

volume = "731",

pages = "141--145",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

}

TY - JOUR

T1 - Test of the TRAPPISTe monolithic detector system

AU - Soung Yee, L.

AU - Álvarez, P.

AU - Martin, E.

AU - Cortina, E.

AU - Ferrer, C.

PY - 2013/4/24

Y1 - 2013/4/24

N2 - A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source. © 2013 Elsevier B.V.

AB - A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source. © 2013 Elsevier B.V.

KW - Monolithic

KW - Pixel

KW - SOI

U2 - 10.1016/j.nima.2013.03.052

DO - 10.1016/j.nima.2013.03.052

M3 - Article

SN - 0168-9002

VL - 731

SP - 141

EP - 145

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Test of the TRAPPISTe monolithic detector system

Abstract

Keywords

Access to Document

Fingerprint

Cite this