In this work, the temperature dependence of the resistive switching phenomenon in metal-oxide-semiconductor field-effect-transistor (MOSFETs) with an ultra-thin Hf-based high-k dielectric is studied through analysis of the gate and drain currents for the two dielectric conductivity states. These two different conductive states of the resistive switching have been associated with the dielectric breakdown (BD) and dielectric BD reversibility (R), respectively, and are related to the creation of a BD path through the dielectric that can be understood as a conductive filament. The results of the temperature dependence of the post-BD gate current are in agreement with those obtained from the study of the injected charge to recovery, which is a useful parameter with which to analyze the switch from the high to low conductivity state. The drain current in the MOSFETs for the two conductivity states, for different locations of the BD path along the channel (close to the source and close to the drain), and at several temperatures has also been studied. The results contribute to a better understanding of the resistive switching phenomenon in ultra-thin gate dielectrics. This contribution could be useful for the developing of models to describe BD reversibility. © 2013 American Vacuum Society.
|Journal||Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics|
|Publication status||Published - 1 Jan 2013|