Temperature and polarity dependence of the switching behavior of Ni/HfO<inf>2</inf>-based RRAM devices

A. Rodriguez, M. B. Gonzalez, E. Miranda, F. Campabadal, J. Suñe

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

© 2015 Elsevier B.V. All rights reserved. In this work, the impact of temperature and switching polarity on the stability and variability of Ni/HfO2-based RRAM structures has been investigated for temperatures ranging from -40 °C to 175 °C. Special attention is given to the analysis of the variability and thermal behavior of the reset currents and voltages. The experimental results show that the temperature plays a key role in the reset operation, owing to the self-accelerated dissolution process of the conductive filament. Furthermore, for both polarities, a larger instability of the on-state current at high temperatures is evidenced.
Original languageEnglish
Pages (from-to)75-78
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 1 Nov 2015

Keywords

  • Conductive filament
  • HfO 2
  • Ni Resistive random access memory (RRAM)
  • Unipolar resistive switching
  • Variability

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