© 2015 Elsevier B.V. All rights reserved. In this work, the impact of temperature and switching polarity on the stability and variability of Ni/HfO2-based RRAM structures has been investigated for temperatures ranging from -40 °C to 175 °C. Special attention is given to the analysis of the variability and thermal behavior of the reset currents and voltages. The experimental results show that the temperature plays a key role in the reset operation, owing to the self-accelerated dissolution process of the conductive filament. Furthermore, for both polarities, a larger instability of the on-state current at high temperatures is evidenced.
|Publication status||Published - 1 Nov 2015|
- Conductive filament
- HfO 2
- Ni Resistive random access memory (RRAM)
- Unipolar resistive switching