Original language | Undefined/Unknown |
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Place of Publication | San Francisco. (US) |
Number of pages | 4 |
Publication status | Published - Jun 1998 |
Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives". Technical Dugest of the 1998 IEEE International Electron Devices Meeting.
J. Suñé, E. Miranda, M. Nafría, X. Aymerich, IEEE ( The Institute of Electrical and Electronics Engineers) (Editor)
Research output: Book/Report › Proceeding › Research