Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives". Technical Dugest of the 1998 IEEE International Electron Devices Meeting.

J. Suñé, E. Miranda, M. Nafría, X. Aymerich, IEEE ( The Institute of Electrical and Electronics Engineers) (Editor)

Research output: Book/ReportProceedingResearch

Original languageUndefined/Unknown
Place of PublicationSan Francisco. (US)
Number of pages4
Publication statusPublished - Jun 1998

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