Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives".: Technical Dugest of the 1998 IEEE International Electron Devices Meeting.

J. Suñé; E. Miranda; M. Nafría; X. Aymerich; IEEE ( The Institute of Electrical and Electronics Engineers)

Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives". Technical Dugest of the 1998 IEEE International Electron Devices Meeting.

J. Suñé, E. Miranda, M. Nafría, X. Aymerich, IEEE ( The Institute of Electrical and Electronics Engineers) (Editor)

Research output: Book/Report › Proceeding › Research

Original language	Undefined/Unknown
Place of Publication	San Francisco. (US)
Number of pages	4
Publication status	Published - Jun 1998

Cite this

Suñé, J. ; Miranda, E. ; Nafría, M. ; Aymerich, X. ; Engineers), IEEE ( The Institute of Electrical and Electronics (Editor). / Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives". Technical Dugest of the 1998 IEEE International Electron Devices Meeting. San Francisco. (US), 1998. 4 p.

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title = "Technical Dugest of the 1998 IEEE International Electron Devices Meeting. {"}Point contact conduction at the oxide breakdown of MOS decives{"}.: Technical Dugest of the 1998 IEEE International Electron Devices Meeting.",

author = "J. Su{\~n}{\'e} and E. Miranda and M. Nafr{\'i}a and X. Aymerich",

editor = "Engineers), {IEEE ( The Institute of Electrical and Electronics}",

year = "1998",

month = jun,

language = "Indefinido/desconocido",

}

Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives". Technical Dugest of the 1998 IEEE International Electron Devices Meeting. / Suñé, J.; Miranda, E.; Nafría, M.; Aymerich, X.; Engineers), IEEE ( The Institute of Electrical and Electronics (Editor).

San Francisco. (US), 1998. 4 p.

Research output: Book/Report › Proceeding › Research

TY - BOOK

T1 - Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives".

T2 - Technical Dugest of the 1998 IEEE International Electron Devices Meeting.

AU - Suñé, J.

AU - Miranda, E.

AU - Nafría, M.

AU - Aymerich, X.

A2 - Engineers), IEEE ( The Institute of Electrical and Electronics

PY - 1998/6

Y1 - 1998/6

M3 - Libro de Actas

BT - Technical Dugest of the 1998 IEEE International Electron Devices Meeting. "Point contact conduction at the oxide breakdown of MOS decives".

CY - San Francisco. (US)

ER -