Technical Digest of the 1998 IEEE International Electron Devices Meeting (IEDM'98). "Point Contact COnduction at the Oxide Breakdown of MOS Devices". The 1998 IEEE International Electron Devices Meeting (IEDM'98).

J. Suñé, E. Miranda, M. Nafría, X. Aymerich, - (Editor)

Research output: Book/ReportProceedingResearch

Original languageUndefined/Unknown
Place of PublicationSan Francisco. (US)
Number of pages4
Publication statusPublished - Jun 1998

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