Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Fernando Leonel Aguirre; Alberto Rodriguez-Fernandez; Sebastian Matias Pazos; Jordi Suñé; Enrique Miranda; Felix Palumbo

doi:https://doi.org/10.1109/TED.2019.2922555

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Fernando Leonel Aguirre, Alberto Rodriguez-Fernandez, Sebastian Matias Pazos, Jordi Suñé, Enrique Miranda, Felix Palumbo

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research

5 Citations (Scopus)

Abstract

© 1963-2012 IEEE. In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.

Original language	English
Article number	8746809
Pages (from-to)	3349-3355
Journal	IEEE Transactions on Electron Devices
Volume	66
DOIs	https://doi.org/10.1109/TED.2019.2922555
Publication status	Published - 1 Aug 2019

Keywords

High-k
progressive oxide breakdown
resistive random access memory (RRAM)
resistive switching (RS)

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title = "Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides",

abstract = "{\textcopyright} 1963-2012 IEEE. In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.",

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year = "2019",

month = aug,

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doi = "https://doi.org/10.1109/TED.2019.2922555",

language = "English",

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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides. / Aguirre, Fernando Leonel; Rodriguez-Fernandez, Alberto; Pazos, Sebastian Matias; Suñé, Jordi ; Miranda, Enrique; Palumbo, Felix.

In: IEEE Transactions on Electron Devices, Vol. 66, 8746809, 01.08.2019, p. 3349-3355.

Research output: Contribution to journal › Article › Research

TY - JOUR

T1 - Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

AU - Aguirre, Fernando Leonel

AU - Rodriguez-Fernandez, Alberto

AU - Pazos, Sebastian Matias

AU - Suñé, Jordi

AU - Miranda, Enrique

AU - Palumbo, Felix

PY - 2019/8/1

Y1 - 2019/8/1

N2 - © 1963-2012 IEEE. In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.

AB - © 1963-2012 IEEE. In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.

KW - High-k

KW - progressive oxide breakdown

KW - resistive random access memory (RRAM)

KW - resistive switching (RS)

UR - https://ddd.uab.cat/record/215344

U2 - https://doi.org/10.1109/TED.2019.2922555

DO - https://doi.org/10.1109/TED.2019.2922555

M3 - Article

VL - 66

SP - 3349

EP - 3355

M1 - 8746809

ER -

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

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Keywords

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