TY - JOUR
T1 - Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
AU - Aguirre, Fernando Leonel
AU - Rodriguez-Fernandez, Alberto
AU - Pazos, Sebastian Matias
AU - Suñé, Jordi
AU - Miranda, Enrique
AU - Palumbo, Felix
PY - 2019/8/1
Y1 - 2019/8/1
N2 - © 1963-2012 IEEE. In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.
AB - © 1963-2012 IEEE. In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.
KW - High-k
KW - progressive oxide breakdown
KW - resistive random access memory (RRAM)
KW - resistive switching (RS)
UR - https://ddd.uab.cat/record/215344
U2 - https://doi.org/10.1109/TED.2019.2922555
DO - https://doi.org/10.1109/TED.2019.2922555
M3 - Article
VL - 66
SP - 3349
EP - 3355
M1 - 8746809
ER -