Study of the admittance hysteresis cycles in TiN/Ti/HfO<inf>2</inf>/W-based RRAM devices

S. Dueñas, H. Castán, H. García, E. Miranda, M. B. Gonzalez, F. Campabadal

Research output: Contribution to journalArticleResearchpeer-review

11 Citations (Scopus)

Abstract

© 2017 Elsevier B.V. Similarly to the current, the admittance of TiN/Ti/HfO2/W-based resistive memories shows well-defined minor switching loops associated with partial transitions between the ON and OFF states. Excellent control of the intermediate states is achieved in these samples by means of a proper sequence of input signals and current compliances. It is shown that, as the resistance state of the conductive filament changes, the associated susceptance also exhibits multilevel response. Susceptance values are negative in the ON state, indicating an inductive behavior of the conductive filaments.
Original languageEnglish
Pages (from-to)30-33
JournalMicroelectronic Engineering
Volume178
DOIs
Publication statusPublished - 25 Jun 2017

Keywords

  • Admittance cycles
  • Atomic layer deposition
  • Hafnium oxide
  • RRAM devices

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