© 1963-2012 IEEE. Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 May 2016|
- Cryogenic measurements
- hafnium oxide
- memory modeling
- nonvolatile memory (NVM)
- resistive-switching memory (RRAM).