Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors

Cesar Vaca, Mireia B. Gonzalez, Helena Castan, Hector Garcia, Salvador Duenas, Francesca Campabadal, Enrique Miranda, Luis A. Bailon

Research output: Contribution to journalArticleResearchpeer-review

9 Citations (Scopus)

Abstract

© 1963-2012 IEEE. Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.
Original languageEnglish
Article number7450179
Pages (from-to)1877-1883
JournalIEEE Transactions on Electron Devices
Volume63
Issue number5
DOIs
Publication statusPublished - 1 May 2016

Keywords

  • Cryogenic measurements
  • hafnium oxide
  • memory modeling
  • nonvolatile memory (NVM)
  • resistive-switching memory (RRAM).

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