Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors

Cesar Vaca; Mireia B. Gonzalez; Helena Castan; Hector Garcia; Salvador Duenas; Francesca Campabadal; Enrique Miranda; Luis A. Bailon

doi:10.1109/TED.2016.2546898

Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors

Cesar Vaca, Mireia B. Gonzalez, Helena Castan, Hector Garcia, Salvador Duenas, Francesca Campabadal, Enrique Miranda, Luis A. Bailon

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

12 Citations (Scopus)

Abstract

© 1963-2012 IEEE. Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.

Original language	English
Article number	7450179
Pages (from-to)	1877-1883
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	5
DOIs	https://doi.org/10.1109/TED.2016.2546898
Publication status	Published - 1 May 2016

Keywords

Cryogenic measurements
hafnium oxide
memory modeling
nonvolatile memory (NVM)
resistive-switching memory (RRAM).

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10.1109/TED.2016.2546898

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title = "Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors",

abstract = "{\textcopyright} 1963-2012 IEEE. Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.",

keywords = "Cryogenic measurements, hafnium oxide, memory modeling, nonvolatile memory (NVM), resistive-switching memory (RRAM).",

author = "Cesar Vaca and Gonzalez, {Mireia B.} and Helena Castan and Hector Garcia and Salvador Duenas and Francesca Campabadal and Enrique Miranda and Bailon, {Luis A.}",

year = "2016",

month = may,

day = "1",

doi = "10.1109/TED.2016.2546898",

language = "English",

volume = "63",

pages = "1877--1883",

number = "5",

}

Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors. / Vaca, Cesar; Gonzalez, Mireia B.; Castan, Helena; Garcia, Hector; Duenas, Salvador; Campabadal, Francesca; Miranda, Enrique; Bailon, Luis A.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 5, 7450179, 01.05.2016, p. 1877-1883.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

AU - Vaca, Cesar

AU - Gonzalez, Mireia B.

AU - Castan, Helena

AU - Garcia, Hector

AU - Duenas, Salvador

AU - Campabadal, Francesca

AU - Miranda, Enrique

AU - Bailon, Luis A.

PY - 2016/5/1

Y1 - 2016/5/1

N2 - © 1963-2012 IEEE. Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.

AB - © 1963-2012 IEEE. Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current-voltage ( I-V) curves show a maximum resistance, R0 , at zero bias and a minimum value, R ∞ , at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the $I$ - $V$ curves is reported and its temperature dependence analyzed.

KW - Cryogenic measurements

KW - hafnium oxide

KW - memory modeling

KW - nonvolatile memory (NVM)

KW - resistive-switching memory (RRAM).

U2 - 10.1109/TED.2016.2546898

DO - 10.1109/TED.2016.2546898

M3 - Article

VL - 63

SP - 1877

EP - 1883

IS - 5

M1 - 7450179

ER -

Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO<inf>2</inf>-Si capacitors

Abstract

Keywords

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