Structural Properties of Yttria-Stabilized Zirconia Films Grown on Silicon (001) Using MOCVD

Gemma Garcia, Juan Casado, Joan Llibre, Joan Cifre, Albert Figueras, Salvador Galí, Josep Bassas

Research output: Contribution to journalArticleResearchpeer-review

16 Citations (Scopus)

Abstract

Layers of yttria-stabilized zirconia with different yttria content were prepared using MOCVD. The variation of the crystallographic parameters of the cell, as well as the residual stress of the deposits have been studied by XRD as a function of yttria content. The maximum value of the stress has been correlated with a deformation of the cell, in the cubic domain, due to an intrinsic structural modification of the crystals.
Original languageEnglish
Pages (from-to)91-96
JournalChemical Vapor Deposition
Volume3
Issue number2
DOIs
Publication statusPublished - 1 Jan 1997

Keywords

  • Lattice parameters
  • MOCVD
  • Stability domains
  • Stress
  • YSZ

Fingerprint Dive into the research topics of 'Structural Properties of Yttria-Stabilized Zirconia Films Grown on Silicon (001) Using MOCVD'. Together they form a unique fingerprint.

Cite this