The structural, optical and electrical characteristics of commercially available cubic (β)-SiC films grown on 〈001〉 silicon waters were reported. For the structural characterization, combined plane view and cross-section transmission electron spectroscopy observations were made. For the optical investigations, low-temperature photoluminescence (2 K) and room temperature Raman and infrared spectra were measured. For the electrical characterization, Hall effect and resistivity measurements were performed in the temperature range 15-500 K. © 1995.
|Journal||Materials Science and Engineering B|
|Publication status||Published - 1 Jan 1995|
- Electrical measurements
- Optical properties
- Silicon carbide
- Transmission electron microscopy
Stoemenos, J., Dezauzier, C., Arnaud, G., Contreras, S., Camassel, J., Pascual, J., & Robert, J. L. (1995). Structural, optical and electrical properties of state of the art cubic SiC films. Materials Science and Engineering B, 29, 160-164. https://doi.org/10.1016/0921-5107(94)04037-5