The structural, optical and electrical characteristics of commercially available cubic (β)-SiC films grown on 〈001〉 silicon waters were reported. For the structural characterization, combined plane view and cross-section transmission electron spectroscopy observations were made. For the optical investigations, low-temperature photoluminescence (2 K) and room temperature Raman and infrared spectra were measured. For the electrical characterization, Hall effect and resistivity measurements were performed in the temperature range 15-500 K. © 1995.
|Journal||Materials Science and Engineering B|
|Publication status||Published - 1 Jan 1995|
- Electrical measurements
- Optical properties
- Silicon carbide
- Transmission electron microscopy