Structural characterization of poly-SiC grown on SiO<inf>2</inf>/Si by metalorganic chemical vapor deposition

J. Rodriguez-Viejo, J. Stoemenos, N. Clavaguera, M. T. Clavaguera-Mora

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Polycrystalline β-SiC films were deposited on (100) Si wafers in the temperature range of 950 to 1130°C from a mixture of Si(CH3)4 and H2 in a hot-wall reactor. A thin SiO2 buffer layer was thermally grown on the Si substrate prior to the deposition, in order to avoid strain development due to the 8% difference in thermal expansion coefficients of the substrate and the overgrown. The growth of the β-SiC polycrystalline films occurs by the formation of microtwins having their twin planes perpendicular to the direction of growth. The strong [111] preferred orientation through microtwins at low temperatures (∼1100°C) is attributed to the very low adatom mobility in conjunction with the high number of atoms which can be incorporated per unit area on the (111) plane at low energy sites.
Original languageEnglish
Pages (from-to)217-222
JournalSolid State Phenomena
Volume51-52
Publication statusPublished - 1 Jan 1996

Keywords

  • Growth mode
  • Low pressure metal-organic chemical vapor deposition
  • Microtwins
  • Poly-sic
  • Thin films

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