Strain tuned magnetoelectric coupling in orthorhombic YMn O<inf>3</inf> thin films

X. Marti, I. Fina, V. Skumryev, C. Ferrater, M. Varela, L. Fábrega, F. Sánchez, J. Fontcuberta

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Abstract

Orthorhombic YMn O3 epitaxial thin films were grown on Nb(0.5%)-doped SrTi O3 (001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. Dielectric properties were investigated as a function of the temperature and magnetic field. The dielectric peak occurring at temperatures below the antiferromagnetic ordering is proved to be magnetoelectric and its amplitude is dependent on the unit cell distortion. These findings allow tailoring ferromagnetic and magnetoelectric properties via epitaxial strain. © 2009 American Institute of Physics.
Original languageEnglish
Article number142903
JournalApplied Physics Letters
Volume95
DOIs
Publication statusPublished - 1 Jan 2009

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    Marti, X., Fina, I., Skumryev, V., Ferrater, C., Varela, M., Fábrega, L., Sánchez, F., & Fontcuberta, J. (2009). Strain tuned magnetoelectric coupling in orthorhombic YMn O<inf>3</inf> thin films. Applied Physics Letters, 95, [142903]. https://doi.org/10.1063/1.3238287