Strain relaxation and oxygen superstructure modulation in epitaxial Sr4 Fe6 O13±δ films

J. Santiso; J. A. Pardo; C. Solís; G. Garcia; A. Figueras; M. D. Rossell; G. Van Tendeloo

doi:10.1063/1.1886264

Strain relaxation and oxygen superstructure modulation in epitaxial Sr4 Fe6 O13±δ films

J. Santiso^*, J. A. Pardo, C. Solís, G. Garcia, A. Figueras, M. D. Rossell, G. Van Tendeloo

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

The compressive strain induced in epitaxial Sr4 Fe6 O13±δ (SFO) films of different thicknesses grown on SrTiO3 substrates is partially released by the modulation of the incommensurate oxygen superstructure along the a -axis parallel to the substrate [q=α am*, superspace group Xmmm (α00) 0s0]. The modulation α value varies proportionally to the in-plane a -parameter in a continuous range from 0.41, for fully strained thin films of about 20-30 nm, to 0.44 for partially-relaxed thicker films of about 280 nm. This mechanism is responsible for the observed slow relaxation of the cell structure upon the film thickness increase in comparison with an equilibrium misfit dislocation-mediated relaxation.

Original language	English
Article number	132105
Pages (from-to)	1-3
Number of pages	3
Journal	Applied physics letters
Volume	86
Issue number	13
DOIs	https://doi.org/10.1063/1.1886264
Publication status	Published - 28 Mar 2005

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title = "Strain relaxation and oxygen superstructure modulation in epitaxial Sr4 Fe6 O13±δ films",

abstract = "The compressive strain induced in epitaxial Sr4 Fe6 O13±δ (SFO) films of different thicknesses grown on SrTiO3 substrates is partially released by the modulation of the incommensurate oxygen superstructure along the a -axis parallel to the substrate [q=α am*, superspace group Xmmm (α00) 0s0]. The modulation α value varies proportionally to the in-plane a -parameter in a continuous range from 0.41, for fully strained thin films of about 20-30 nm, to 0.44 for partially-relaxed thicker films of about 280 nm. This mechanism is responsible for the observed slow relaxation of the cell structure upon the film thickness increase in comparison with an equilibrium misfit dislocation-mediated relaxation.",

author = "J. Santiso and Pardo, \{J. A.\} and C. Sol{\'i}s and G. Garcia and A. Figueras and Rossell, \{M. D.\} and \{Van Tendeloo\}, G.",

note = "Funding Information: The authors would like to acknowledge the SCT for the XRD measurements. This work was partially supported by the MAT2002-03075 project of the Spanish government and the IAP V-1 project of the Belgian government.",

year = "2005",

month = mar,

day = "28",

doi = "10.1063/1.1886264",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied physics letters",

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T1 - Strain relaxation and oxygen superstructure modulation in epitaxial Sr4 Fe6 O13±δ films

AU - Santiso, J.

AU - Pardo, J. A.

AU - Solís, C.

AU - Garcia, G.

AU - Figueras, A.

AU - Rossell, M. D.

AU - Van Tendeloo, G.

N1 - Funding Information: The authors would like to acknowledge the SCT for the XRD measurements. This work was partially supported by the MAT2002-03075 project of the Spanish government and the IAP V-1 project of the Belgian government.

PY - 2005/3/28

Y1 - 2005/3/28

N2 - The compressive strain induced in epitaxial Sr4 Fe6 O13±δ (SFO) films of different thicknesses grown on SrTiO3 substrates is partially released by the modulation of the incommensurate oxygen superstructure along the a -axis parallel to the substrate [q=α am*, superspace group Xmmm (α00) 0s0]. The modulation α value varies proportionally to the in-plane a -parameter in a continuous range from 0.41, for fully strained thin films of about 20-30 nm, to 0.44 for partially-relaxed thicker films of about 280 nm. This mechanism is responsible for the observed slow relaxation of the cell structure upon the film thickness increase in comparison with an equilibrium misfit dislocation-mediated relaxation.

AB - The compressive strain induced in epitaxial Sr4 Fe6 O13±δ (SFO) films of different thicknesses grown on SrTiO3 substrates is partially released by the modulation of the incommensurate oxygen superstructure along the a -axis parallel to the substrate [q=α am*, superspace group Xmmm (α00) 0s0]. The modulation α value varies proportionally to the in-plane a -parameter in a continuous range from 0.41, for fully strained thin films of about 20-30 nm, to 0.44 for partially-relaxed thicker films of about 280 nm. This mechanism is responsible for the observed slow relaxation of the cell structure upon the film thickness increase in comparison with an equilibrium misfit dislocation-mediated relaxation.

UR - https://www.scopus.com/pages/publications/17644376845

U2 - 10.1063/1.1886264

DO - 10.1063/1.1886264

M3 - Article

AN - SCOPUS:17644376845

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied physics letters

JF - Applied physics letters

IS - 13

M1 - 132105

ER -

Strain relaxation and oxygen superstructure modulation in epitaxial Sr4 Fe6 O13±δ films

Abstract

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