Stochastic resonance effect in binary STDP performed by RRAM devices

Research output: Book/ReportProceedingResearchpeer-review

Abstract

The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses.

Original languageEnglish
Number of pages4
ISBN (Electronic)9781665452250
DOIs
Publication statusPublished - Nov 2022

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2022-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Keywords

  • memristor
  • neuromorphic systems
  • resistive switching
  • RRAM
  • STDP
  • Stochastic resonance

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