Abstract
We consider the application of a stochastic model of two-layer systems to a simple band structure in semiconductors. The telegrapher’s equation for the probability density is recovered and the source term is expressed as a function of the electron and hole concentrations. We derive the dispersion relation and we discuss its correction terms with respect to the purely telegrapher’s description in fermion systems, for example, a photoexcited electron-hole plasma in semiconductors. © 1998 The American Physical Society.
| Original language | English |
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| Pages (from-to) | 12145-12150 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 57 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 1 Jan 1998 |