We consider the application of a stochastic model of two-layer systems to a simple band structure in semiconductors. The telegrapher’s equation for the probability density is recovered and the source term is expressed as a function of the electron and hole concentrations. We derive the dispersion relation and we discuss its correction terms with respect to the purely telegrapher’s description in fermion systems, for example, a photoexcited electron-hole plasma in semiconductors. © 1998 The American Physical Society.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1 Jan 1998|