Stochastic model of plasma waves for a simple band structure in semiconductors

M. Zakari

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    2 Citations (Scopus)

    Abstract

    We consider the application of a stochastic model of two-layer systems to a simple band structure in semiconductors. The telegrapher’s equation for the probability density is recovered and the source term is expressed as a function of the electron and hole concentrations. We derive the dispersion relation and we discuss its correction terms with respect to the purely telegrapher’s description in fermion systems, for example, a photoexcited electron-hole plasma in semiconductors. © 1998 The American Physical Society.
    Original languageEnglish
    Pages (from-to)12145-12150
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume57
    Issue number19
    DOIs
    Publication statusPublished - 1 Jan 1998

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