Statistics of Successive Breakdown Events in Gate Oxides

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Original language	English
Pages (from-to)	272-274
Journal	IEEE Electron Device Letters
Volume	24
DOIs	https://doi.org/10.1109/LED.2003.812139
Publication status	Published - 1 Jan 2003

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@article{53c6a65ed16c4702b79de24604d1607e,

title = "Statistics of Successive Breakdown Events in Gate Oxides",

author = "J. Su{\~n}{\'e} and E. Wu",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/LED.2003.812139",

language = "English",

volume = "24",

pages = "272--274",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}