This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Aug 2021|
- Bias temperature instability (BTI)
- maximum current fluctuation (MCF)
- random telegraph noise (RTN)
- time-dependent variability (TDV)