Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses

Research output: Contribution to journalArticleResearch

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)1523-1528
JournalMicroelectronics and Reliability
Volume44
DOIs
Publication statusPublished - 1 Jan 2004

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