Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

W. Savero Torres, J. F. Sierra, L. A. Benitez, F. Bonell, M. V. Costache, S. O. Valenzuela

    Research output: Contribution to journalArticleResearchpeer-review

    14 Citations (Scopus)

    Abstract

    © 2017 IOP Publishing Ltd. Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.
    Original languageEnglish
    Article number041008
    Journal2D Materials
    Volume4
    Issue number4
    DOIs
    Publication statusPublished - 28 Sep 2017

    Keywords

    • grapheme
    • spin Hall effect
    • spin precession
    • spintronics

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