Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures

Jose H. Garcia, Aron W. Cummings, Stephan Roche

    Research output: Contribution to journalArticleResearchpeer-review

    41 Citations (Scopus)

    Abstract

    © 2017 American Chemical Society. We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS2 system is found to maximize spin proximity effects compared to graphene on MoS2, WSe2, or MoSe2 with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications.
    Original languageEnglish
    Pages (from-to)5078-5083
    JournalNano Letters
    Volume17
    Issue number8
    DOIs
    Publication statusPublished - 9 Aug 2017

    Keywords

    • Graphene
    • proximity effects
    • spin Hall effect
    • spin transport
    • transition metal dichalcogenide
    • weak antilocalization

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