We develop a spin-dependent injection model that can be used in time-dependent simulators of spintronic semiconductor devices. The physical basis of the method and the algorithm implementation are described. We test the validity of our model by simulating a two terminal ballistic semiconductor with the Monte Carlo technique and comparing the outcome to a simple low bias equivalent circuit, with excellent agreement. The results obtained demonstrate that the methodology proposed is suitable for use in time-dependent simulators of spintronic devices in order to make qualitative predictions. © 2008 American Institute of Physics.
|Journal||Journal of Applied Physics|
|Publication status||Published - 22 Oct 2008|