Spin-dependent injection model for Monte Carlo device simulation

H. López; X. Oriols; J. Suñé; X. Cartoix̀

doi:10.1063/1.2986137

Spin-dependent injection model for Monte Carlo device simulation

H. López, X. Oriols, J. Suñé, X. Cartoix̀

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

We develop a spin-dependent injection model that can be used in time-dependent simulators of spintronic semiconductor devices. The physical basis of the method and the algorithm implementation are described. We test the validity of our model by simulating a two terminal ballistic semiconductor with the Monte Carlo technique and comparing the outcome to a simple low bias equivalent circuit, with excellent agreement. The results obtained demonstrate that the methodology proposed is suitable for use in time-dependent simulators of spintronic devices in order to make qualitative predictions. © 2008 American Institute of Physics.

Original language	English
Article number	073702
Journal	Journal of Applied Physics
Volume	104
Issue number	7
DOIs	https://doi.org/10.1063/1.2986137
Publication status	Published - 22 Oct 2008

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title = "Spin-dependent injection model for Monte Carlo device simulation",

abstract = "We develop a spin-dependent injection model that can be used in time-dependent simulators of spintronic semiconductor devices. The physical basis of the method and the algorithm implementation are described. We test the validity of our model by simulating a two terminal ballistic semiconductor with the Monte Carlo technique and comparing the outcome to a simple low bias equivalent circuit, with excellent agreement. The results obtained demonstrate that the methodology proposed is suitable for use in time-dependent simulators of spintronic devices in order to make qualitative predictions. {\textcopyright} 2008 American Institute of Physics.",

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AU - López, H.

AU - Oriols, X.

AU - Suñé, J.

AU - Cartoix̀, X.

PY - 2008/10/22

Y1 - 2008/10/22

N2 - We develop a spin-dependent injection model that can be used in time-dependent simulators of spintronic semiconductor devices. The physical basis of the method and the algorithm implementation are described. We test the validity of our model by simulating a two terminal ballistic semiconductor with the Monte Carlo technique and comparing the outcome to a simple low bias equivalent circuit, with excellent agreement. The results obtained demonstrate that the methodology proposed is suitable for use in time-dependent simulators of spintronic devices in order to make qualitative predictions. © 2008 American Institute of Physics.

AB - We develop a spin-dependent injection model that can be used in time-dependent simulators of spintronic semiconductor devices. The physical basis of the method and the algorithm implementation are described. We test the validity of our model by simulating a two terminal ballistic semiconductor with the Monte Carlo technique and comparing the outcome to a simple low bias equivalent circuit, with excellent agreement. The results obtained demonstrate that the methodology proposed is suitable for use in time-dependent simulators of spintronic devices in order to make qualitative predictions. © 2008 American Institute of Physics.

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DO - 10.1063/1.2986137

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