SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

Fernando Garcia-Redondo, Robert P. Gowers, Albert Crespo-Yepes, Marisa Lopez-Vallejo, Liudi Jiang

Research output: Contribution to journalArticleResearchpeer-review

45 Citations (Scopus)


© 2004-2012 IEEE. In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time. The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice, and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent random telegraph noise and device degradation.
Original languageEnglish
Article number7511783
Pages (from-to)1255-1264
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Issue number8
Publication statusPublished - 1 Aug 2016


  • Circuit simulation
  • compact model
  • degradation
  • memristor
  • multi-level
  • ReRAM
  • RRAM
  • RTN
  • temperature
  • variability


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