Soft Breakdown Conduction in Ultrathin (3-5 nm) Gate Dielectrics

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich, L. Fonseca, F. Campabadal

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	82-89
Journal	IEEE Transactions on Electron Devices
Volume	47
DOIs	https://doi.org/10.1109/16.817571
Publication status	Published - 1 Jan 2000

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@article{6577430b013e46739e364472289568a5,

title = "Soft Breakdown Conduction in Ultrathin (3-5 nm) Gate Dielectrics",

author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich and L. Fonseca and F. Campabadal",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/16.817571",

language = "English",

volume = "47",

pages = "82--89",

}