© 2017 IEEE. A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain-source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional FETs.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Nov 2017|
- 2D materials
- charge conservation
- monolithic microwave integrated circuit (MMIC)
- radio-frequency (RF) figures of merit (FoMs)