Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances

Francisco Pasadas, Wei Wei, Emiliano Pallecchi, Henri Happy, David Jiménez

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)

Abstract

© 2017 IEEE. A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain-source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional FETs.
Original languageEnglish
Article number8039423
Pages (from-to)4715-4723
JournalIEEE Transactions on Electron Devices
Volume64
Issue number11
DOIs
Publication statusPublished - 1 Nov 2017

Keywords

  • 2D materials
  • FET
  • charge conservation
  • monolithic microwave integrated circuit (MMIC)
  • radio-frequency (RF) figures of merit (FoMs)
  • s-parameters
  • small-signal

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