The geometrical and electronic structure properties of 100 and 110 silicon nanowires in the absence of surface passivation are studied by means of density-functional calculations. As we have shown in a recent publication the reconstruction of facets can give rise to surface metallic states. In this work, we analyze the dependence of geometric and electronic structure features on the size of the wire and on the growth direction. © 2006 The American Physical Society.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 31 Oct 2006|