SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope

M. Nafría, M. Porti, X. Aymerich, Pandalai S.G. [Ed] (Editor)

Research output: Chapter in Book › Chapter › Research

Original language	English
Title of host publication	Recent research developments in science and technology of semiconductors
Place of Publication	Kerala (IN)
Pages	147-173
Number of pages	26
Volume	I
Edition	1
Publication status	Published - 1 Jan 2002

Cite this

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title = "SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope",

author = "M. Nafr{\'i}a and M. Porti and X. Aymerich and [Ed], {Pandalai S.G.}",

year = "2002",

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day = "1",

language = "English",

isbn = "978-81-7895-070-9",

volume = "I",

pages = "147--173",

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T1 - SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope

AU - Nafría, M.

AU - Porti, M.

AU - Aymerich, X.

A2 - [Ed], Pandalai S.G.

PY - 2002/1/1

Y1 - 2002/1/1

M3 - Chapter

SN - 978-81-7895-070-9

VL - I

SP - 147

EP - 173

BT - Recent research developments in science and technology of semiconductors

CY - Kerala (IN)

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