SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope

M. Nafría, M. Porti, X. Aymerich, Pandalai S.G. [Ed] (Editor)

    Research output: Chapter in BookChapterResearch

    Original languageEnglish
    Title of host publicationRecent research developments in science and technology of semiconductors
    Place of PublicationKerala (IN)
    Pages147-173
    Number of pages26
    VolumeI
    Edition1
    Publication statusPublished - 1 Jan 2002

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