© 1980-2012 IEEE. This letter reports on the design and characterization of a dual-frequency oscillator that consist of a reliable seesaw-shaped tungsten resonator integrated in the back end of line of a standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) technology and a high-gain, low power (<10μm) and ultra-compact transimpedance amplifier (TIA) core. The 550-/900-kHz prototyped CMOS-MEMS oscillator can be operated with reduced TIA supply voltage (VDD =1.65 V)) and moderated dc MEMS bias ((VDC =18 V) while consuming only 8.5μW and maintaining satisfactory performance. The measured phase noise is -103.8 dBc/Hz and-99.6 dBc/Hz at 1-kHz offset for the first and second operating frequencies, respectively, which is comparable and competitive with the state of the art.
- low power
- transimpedance amplifier