Simulation of thermal reset transitions in resistive switching memories including quantum effects

M. A. Villena; M. B. González; F. Jiménez-Molinos; F. Campabadal; J. B. Roldán; J. Suñé; E. Romera; E. Miranda

doi:10.1063/1.4881500

Simulation of thermal reset transitions in resistive switching memories including quantum effects

M. A. Villena, M. B. González, F. Jiménez-Molinos, F. Campabadal, J. B. Roldán, J. Suñé, E. Romera, E. Miranda

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

51 Citations (Scopus)

Abstract

An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO2/Si-n+ structures has been performed. To do so, we have developed a physically based simulator where both ohmic and tunneling based conduction regimes are considered along with the thermal description of the devices. The devices under study have been successfully fabricated and measured. The experimental data are correctly reproduced with the simulator for devices with a single conductive filament as well as for devices including several conductive filaments. The contribution of each conduction regime has been explained as well as the operation regimes where these ohmic and tunneling conduction processes dominate. © 2014 AIP Publishing LLC.

Original language	English
Article number	214504
Journal	Journal of Applied Physics
Volume	115
Issue number	21
DOIs	https://doi.org/10.1063/1.4881500
Publication status	Published - 7 Jun 2014

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title = "Simulation of thermal reset transitions in resistive switching memories including quantum effects",

abstract = "An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO2/Si-n+ structures has been performed. To do so, we have developed a physically based simulator where both ohmic and tunneling based conduction regimes are considered along with the thermal description of the devices. The devices under study have been successfully fabricated and measured. The experimental data are correctly reproduced with the simulator for devices with a single conductive filament as well as for devices including several conductive filaments. The contribution of each conduction regime has been explained as well as the operation regimes where these ohmic and tunneling conduction processes dominate. {\textcopyright} 2014 AIP Publishing LLC.",

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Simulation of thermal reset transitions in resistive switching memories including quantum effects. / Villena, M. A.; González, M. B.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J. B.; Suñé, J.; Romera, E.; Miranda, E.

In: Journal of Applied Physics, Vol. 115, No. 21, 214504, 07.06.2014.

Research output: Contribution to journal › Article › Research › peer-review

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AU - Villena, M. A.

AU - González, M. B.

AU - Jiménez-Molinos, F.

AU - Campabadal, F.

AU - Roldán, J. B.

AU - Suñé, J.

AU - Romera, E.

AU - Miranda, E.

PY - 2014/6/7

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AB - An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO2/Si-n+ structures has been performed. To do so, we have developed a physically based simulator where both ohmic and tunneling based conduction regimes are considered along with the thermal description of the devices. The devices under study have been successfully fabricated and measured. The experimental data are correctly reproduced with the simulator for devices with a single conductive filament as well as for devices including several conductive filaments. The contribution of each conduction regime has been explained as well as the operation regimes where these ohmic and tunneling conduction processes dominate. © 2014 AIP Publishing LLC.

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