Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process

E. Miranda; A. Cester; J. Suñé; A. Paccagnella; and G. Ghidini

doi:10.1109/TNS.2005.855808

Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process

E. Miranda, A. Cester, J. Suñé, A. Paccagnella, and G. Ghidini

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research

1 Citation (Scopus)

Original language	English
Pages (from-to)	1462-1467
Journal	IEEE Transactions on Nuclear Science
Volume	52
DOIs	https://doi.org/10.1109/TNS.2005.855808
Publication status	Published - 1 Jan 2005

Access to Document

10.1109/TNS.2005.855808

Cite this

@article{7b5ce30456694312ab750d544b9c6974,

title = "Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process",

author = "E. Miranda and A. Cester and J. Su{\~n}{\'e} and A. Paccagnella and Ghidini, {and G.}",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/TNS.2005.855808",

language = "English",

volume = "52",

pages = "1462--1467",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process

AU - Miranda, E.

AU - Cester, A.

AU - Suñé, J.

AU - Paccagnella, A.

AU - Ghidini, and G.

PY - 2005/1/1

Y1 - 2005/1/1

U2 - 10.1109/TNS.2005.855808

DO - 10.1109/TNS.2005.855808

M3 - Article

VL - 52

SP - 1462

EP - 1467

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

ER -