Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken

Research output: Contribution to journalArticleResearch

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)315-323
JournalInternational journal of numerical modelling
Volume23
Issue number4-5
DOIs
Publication statusPublished - 1 Jun 2010

Cite this

Amat, E., Kauerauf, T., Degraeve, R., Rodríguez, R., Nafría, M., Aymerich, X., & Groeseneken, G. (2010). Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric. International journal of numerical modelling, 23(4-5), 315-323. https://doi.org/10.1002/jnm.750