Simulation of BTI-related time-dependent variability in CMOS circuits

Javier Martin-Martinez; Rosana Rodriguez; Montse Nafria

doi:10.1007/978-1-4614-7909-3_30

Simulation of BTI-related time-dependent variability in CMOS circuits

Javier Martin-Martinez, Rosana Rodriguez, Montse Nafria

Research output: Chapter in Book › Chapter › Research › peer-review

1 Citation (Scopus)

Abstract

© Springer Science+Business Media New York 2014. All rights are reserved. The correct evaluation of BTI impact on the circuit performance and reliability is a major concern in current technologies. Since BTI in ultrascaled devices is a stochastic mechanism and aging must be evaluated under the actual operation conditions of devices in the circuit, SPICE and Monte Carlo simulations are customary combined with this purpose. The key point in these simulations is the correct description of the BTI effects in the device and their inclusion in circuit simulators. In this subchapter, the different adopted approaches are presented, pointing out their pros and cons, and illustrated with examples of BTI effects on several analog and digital circuits.

Original language	English
Title of host publication	Bias Temperature Instability for Devices and Circuits
Pages	783-810
Number of pages	27
Volume	9781461479093
DOIs	https://doi.org/10.1007/978-1-4614-7909-3_30
Publication status	Published - 1 Jul 2014

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Martin-Martinez, J., Rodriguez, R., & Nafria, M. (2014). Simulation of BTI-related time-dependent variability in CMOS circuits. In Bias Temperature Instability for Devices and Circuits (Vol. 9781461479093, pp. 783-810) https://doi.org/10.1007/978-1-4614-7909-3_30

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