Silicon Oxide (SiO<inf>x</inf>): A Promising Material for Resistance Switching?

Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon

Research output: Contribution to journalReview articleResearchpeer-review

59 Citations (Scopus)

Abstract

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which—primarily transition metal oxides—are currently being investigated as complementary metal–oxide–semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.
Original languageEnglish
Article number1801187
JournalAdvanced Materials
Volume30
Issue number43
DOIs
Publication statusPublished - 25 Oct 2018

Keywords

  • memristors
  • ReRAM
  • resistance switching
  • silicon oxide

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