Set statistics in conductive bridge random access memory device with Cu/HfO<inf>2</inf>/Pt structure

Meiyun Zhang, Shibing Long, Guoming Wang, Xiaoxin Xu, Yang Li, Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Suñé, Ming Liu

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Abstract

© 2014 AIP Publishing LLC. The switching parameter variation of resistive switching memory is one of the most important challenges in its application. In this letter, we have studied the set statistics of conductive bridge random access memory with a Cu/HfO2/Pt structure. The experimental distributions of the set parameters in several off resistance ranges are shown to nicely fit a Weibull model. The Weibull slopes of the set voltage and current increase and decrease logarithmically with off resistance, respectively. This experimental behavior is perfectly captured by a Monte Carlo simulator based on the cell-based set voltage statistics model and the Quantum Point Contact electron transport model. Our work provides indications for the improvement of the switching uniformity.
Original languageEnglish
Article number193501
JournalApplied Physics Letters
Volume105
Issue number19
DOIs
Publication statusPublished - 10 Nov 2014

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    Zhang, M., Long, S., Wang, G., Xu, X., Li, Y., Liu, Q., Lv, H., Lian, X., Miranda, E., Suñé, J., & Liu, M. (2014). Set statistics in conductive bridge random access memory device with Cu/HfO<inf>2</inf>/Pt structure. Applied Physics Letters, 105(19), [193501]. https://doi.org/10.1063/1.4901530