Self-assembled GaN nanowires on diamond

Fabian Schuster, Florian Furtmayr, Reza Zamani, Cesar Magén, Joan R. Morante, Jordi Arbiol, Jose A. Garrido, Martin Stutzmann

    Research output: Contribution to journalArticleResearchpeer-review

    64 Citations (Scopus)


    We demonstrate the nucleation of self-assembled, epitaxial GaN nanowires (NWs) on (111) single-crystalline diamond without using a catalyst or buffer layer. The NWs show an excellent crystalline quality of the wurtzite crystal structure with m-plane faceting, a low defect density, and axial growth along the c-axis with N-face polarity, as shown by aberration corrected annular bright-field scanning transmission electron microscopy. X-ray diffraction confirms single domain growth with an in-plane epitaxial relationship of (101̄0) GaN ∥ (011̄) Diamond as well as some biaxial tensile strain induced by thermal expansion mismatch. In photoluminescence, a strong and sharp excitonic emission reveals excellent optical properties superior to state-of-the-art GaN NWs on silicon substrates. In combination with the high-quality diamond/NW interface, confirmed by high-resolution transmission electron microscopy measurements, these results underline the potential of p-type diamond/n-type nitride heterojunctions for efficient UV optoelectronic devices. © 2012 American Chemical Society.
    Original languageEnglish
    Pages (from-to)2199-2204
    JournalNano Letters
    Issue number5
    Publication statusPublished - 9 May 2012


    • diamond
    • GaN
    • heteroepitaxy
    • molecular beam epitaxy
    • Nanowires
    • nitrides


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