Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives

T. Marszalek; A. Nosal; R. Pfattner; J. Jung; S. Kotarba; M. Mas-Torrent; B. Krause; J. Veciana; M. Gazicki-Lipman; C. Crickert; G. Schmidt; C. Rovira; J. Ulanski

doi:10.1016/j.orgel.2011.10.001

Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives

T. Marszalek, A. Nosal, R. Pfattner, J. Jung, S. Kotarba, M. Mas-Torrent, B. Krause, J. Veciana, M. Gazicki-Lipman, C. Crickert, G. Schmidt, C. Rovira, J. Ulanski

Research output: Contribution to journal › Article › Research › peer-review

18 Citations (Scopus)

Abstract

We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μFET = 0.1 cm2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	121-128
Journal	Organic Electronics
Volume	13
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2011.10.001
Publication status	Published - 1 Jan 2012

Keywords

Organic field-effect transistors
Organic transistor
Tetrathiafulvalene derivatives
Thin films

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10.1016/j.orgel.2011.10.001

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title = "Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives",

abstract = "We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μFET = 0.1 cm2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. {\textcopyright} 2011 Elsevier B.V. All rights reserved.",

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T1 - Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives

AU - Marszalek, T.

AU - Nosal, A.

AU - Pfattner, R.

AU - Jung, J.

AU - Kotarba, S.

AU - Mas-Torrent, M.

AU - Krause, B.

AU - Veciana, J.

AU - Gazicki-Lipman, M.

AU - Crickert, C.

AU - Schmidt, G.

AU - Rovira, C.

AU - Ulanski, J.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μFET = 0.1 cm2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved.

AB - We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μFET = 0.1 cm2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved.

KW - Organic field-effect transistors

KW - Organic transistor

KW - Tetrathiafulvalene derivatives

KW - Thin films

U2 - 10.1016/j.orgel.2011.10.001

DO - 10.1016/j.orgel.2011.10.001

M3 - Article

SN - 1566-1199

VL - 13

SP - 121

EP - 128

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives

Abstract

Keywords

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