Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives

T. Marszalek, A. Nosal, R. Pfattner, J. Jung, S. Kotarba, M. Mas-Torrent, B. Krause, J. Veciana, M. Gazicki-Lipman, C. Crickert, G. Schmidt, C. Rovira, J. Ulanski

    Research output: Contribution to journalArticleResearchpeer-review

    18 Citations (Scopus)


    We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μFET = 0.1 cm2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)121-128
    JournalOrganic Electronics
    Issue number1
    Publication statusPublished - 1 Jan 2012


    • Organic field-effect transistors
    • Organic transistor
    • Tetrathiafulvalene derivatives
    • Thin films


    Dive into the research topics of 'Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives'. Together they form a unique fingerprint.

    Cite this