Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

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Abstract

The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1024-1028
JournalMicroelectronics Reliability
Volume49
DOIs
Publication statusPublished - 1 Sep 2009

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