The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.
|Publication status||Published - 1 Sep 2009|