Resonant tunnel switching in MISS devices

J. Millán, F. Serra-Mestres, X. Aymerich-Humet

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Abstract

The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. © 1982.
Original languageEnglish
Pages (from-to)565-569
JournalSolid State Electronics
Volume25
DOIs
Publication statusPublished - 1 Jan 1982

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    Millán, J., Serra-Mestres, F., & Aymerich-Humet, X. (1982). Resonant tunnel switching in MISS devices. Solid State Electronics, 25, 565-569. https://doi.org/10.1016/0038-1101(82)90057-0