Resonant tunnel switching in MISS devices

J. Millán, F. Serra-Mestres, X. Aymerich-Humet

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)


The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. © 1982.
Original languageEnglish
Pages (from-to)565-569
JournalSolid State Electronics
Publication statusPublished - 1 Jan 1982


Dive into the research topics of 'Resonant tunnel switching in MISS devices'. Together they form a unique fingerprint.

Cite this