The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. © 1982.
|Journal||Solid State Electronics|
|Publication status||Published - 1 Jan 1982|