Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

Alberto Rodriguez-Fernandez, Samuel Aldana, Francesca Campabadal, Jordi Sune, Enrique Miranda, Francisco Jimenez-Molinos, Juan Bautista Roldan, Mireia Bargallo Gonzalez

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)

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Physics & Astronomy