Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

Research output: Contribution to journal › Article › Research

Access to Document

@article{78352ebc70b14f46945b21e16d0a8813,

title = "Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs",

author = "A. Crespo-Yepes and A. Rothschild and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich and {Martin Martinez}, Javier",

year = "2011",

month = jan,

day = "1",

doi = "https://doi.org/10.1016/j.sse.2011.06.033",

language = "English",

volume = "65-66",

pages = "157----162",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

AU - Crespo-Yepes, A.

AU - Rothschild, A.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

AU - Martin Martinez, Javier

PY - 2011/1/1

Y1 - 2011/1/1

U2 - https://doi.org/10.1016/j.sse.2011.06.033

DO - https://doi.org/10.1016/j.sse.2011.06.033

M3 - Article

VL - 65-66

SP - 157

EP - 162

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -