Original language | English |
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Pages (from-to) | 157--162 |
Journal | SOLID-STATE ELECTRONICS |
Volume | 65-66 |
DOIs | |
Publication status | Published - 1 Jan 2011 |
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
A. Crespo-Yepes, A. Rothschild, R. Rodríguez, M. Nafría, X. Aymerich, Javier Martin Martinez
Research output: Contribution to journal › Article › Research
3
Citations
(Scopus)