Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs

Research output: Contribution to journalArticleResearch

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)157--162
JournalSOLID-STATE ELECTRONICS
Volume65-66
DOIs
Publication statusPublished - 1 Jan 2011

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