Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

A. Crespo-Yepes; R. Rodríguez; M. Nafría; X. Aymerich; Javier Martin Martinez

doi:https://doi.org/10.1016/j.microrel.2013.07.046

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

A. Crespo-Yepes, R. Rodríguez, M. Nafría, X. Aymerich, Javier Martin Martinez

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1247-1251
Journal	MICROELECTRONICS RELIABILITY
Volume	53
DOIs	https://doi.org/10.1016/j.microrel.2013.07.046
Publication status	Published - 1 Jan 2013

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https://doi.org/10.1016/j.microrel.2013.07.046

https://ddd.uab.cat/record/136864

Cite this

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title = "Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications",

author = "A. Crespo-Yepes and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich and {Martin Martinez}, Javier",

year = "2013",

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doi = "https://doi.org/10.1016/j.microrel.2013.07.046",

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T1 - Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

AU - Crespo-Yepes, A.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

AU - Martin Martinez, Javier

PY - 2013/1/1

Y1 - 2013/1/1

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DO - https://doi.org/10.1016/j.microrel.2013.07.046

M3 - Article

VL - 53

SP - 1247

EP - 1251

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -