Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Research output: Contribution to journalArticleResearch

Original languageEnglish
Pages (from-to)1247-1251
JournalMICROELECTRONICS RELIABILITY
Volume53
DOIs
Publication statusPublished - 1 Jan 2013

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