Original language | English |
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Pages (from-to) | 1247-1251 |
Journal | MICROELECTRONICS RELIABILITY |
Volume | 53 |
DOIs | |
Publication status | Published - 1 Jan 2013 |
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications
Research output: Contribution to journal › Article › Research