Resistive switching in CeO<inf>2</inf>/La<inf>0.8</inf>Sr<inf>0.2</inf>MnO<inf>3</inf> bilayer for non-volatile memory applications

R. Ortega-Hernandez, M. Coll, J. Gonzalez-Rosillo, A. Palau, X. Obradors, E. Miranda, T. Puig, J. Suñe

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