© 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.
|Publication status||Published - 1 Nov 2015|
- CeO 2- x
- Non-volatile memory
- Resistive switching