Resistive switching in CeO<inf>2</inf>/La<inf>0.8</inf>Sr<inf>0.2</inf>MnO<inf>3</inf> bilayer for non-volatile memory applications

R. Ortega-Hernandez, M. Coll, J. Gonzalez-Rosillo, A. Palau, X. Obradors, E. Miranda, T. Puig, J. Suñe

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14 Citations (Scopus)

Abstract

© 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.
Original languageEnglish
Article number9865
Pages (from-to)37-40
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 1 Nov 2015

Keywords

  • CeO 2- x
  • LSMO
  • Non-volatile memory
  • Resistive switching
  • RRAM

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