Resistive switching device technology based on silicon oxide for improved ON-OFF ratio-part II: Select devices

Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini

Research output: Contribution to journalArticleResearchpeer-review

36 Citations (Scopus)

Abstract

© 2017 IEEE. The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON-OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiOx) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm-2. Retention study shows a stochastic voltage-dependent ON-OFF transition time in the 10 μs-1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays.
Original languageEnglish
Pages (from-to)122-128
JournalIEEE Transactions on Electron Devices
Volume65
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

Keywords

  • Conductive bridge RAM (CBRAM)
  • Cross-point array
  • Select device
  • Silicon oxide
  • Storage class memory
  • Volatile switching

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