Resistive switching device technology based on silicon oxide for improved ON-OFF ratio-part II: Select devices

Alessandro Bricalli; Elia Ambrosi; Mario Laudato; Marcos Maestro; Rosana Rodriguez; Daniele Ielmini

doi:10.1109/TED.2017.2776085

Resistive switching device technology based on silicon oxide for improved ON-OFF ratio-part II: Select devices

Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

36 Citations (Scopus)

Abstract

© 2017 IEEE. The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON-OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiOx) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm-2. Retention study shows a stochastic voltage-dependent ON-OFF transition time in the 10 μs-1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays.

Original language	English
Pages (from-to)	122-128
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	1
DOIs	https://doi.org/10.1109/TED.2017.2776085
Publication status	Published - 1 Jan 2018

Keywords

Conductive bridge RAM (CBRAM)
Cross-point array
Select device
Silicon oxide
Storage class memory
Volatile switching

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title = "Resistive switching device technology based on silicon oxide for improved ON-OFF ratio-part II: Select devices",

abstract = "{\textcopyright} 2017 IEEE. The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON-OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiOx) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm-2. Retention study shows a stochastic voltage-dependent ON-OFF transition time in the 10 μs-1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays.",

keywords = "Conductive bridge RAM (CBRAM), Cross-point array, Select device, Silicon oxide, Storage class memory, Volatile switching",

author = "Alessandro Bricalli and Elia Ambrosi and Mario Laudato and Marcos Maestro and Rosana Rodriguez and Daniele Ielmini",

year = "2018",

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language = "English",

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Resistive switching device technology based on silicon oxide for improved ON-OFF ratio-part II: Select devices. / Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 1, 01.01.2018, p. 122-128.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Resistive switching device technology based on silicon oxide for improved ON-OFF ratio-part II: Select devices

AU - Bricalli, Alessandro

AU - Ambrosi, Elia

AU - Laudato, Mario

AU - Maestro, Marcos

AU - Rodriguez, Rosana

AU - Ielmini, Daniele

PY - 2018/1/1

Y1 - 2018/1/1

N2 - © 2017 IEEE. The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON-OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiOx) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm-2. Retention study shows a stochastic voltage-dependent ON-OFF transition time in the 10 μs-1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays.

AB - © 2017 IEEE. The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable vertical 3-D cross-point architectures, in particular, offer the opportunity to challenge Flash memory with comparable density and cost. To develop scalable cross-point arrays, however, select devices with sufficient ON-OFF ratio, current capability, and endurance must be available. This paper presents a select device technology based on volatile resistive switching with Cu and Ag top electrode and silicon oxide (SiOx) switching materials. The select device displays ultrahigh resistance window and good current capability exceeding 2 MAcm-2. Retention study shows a stochastic voltage-dependent ON-OFF transition time in the 10 μs-1 ms range, which needs to be further optimized for fast memory operation in storage class memory arrays.

KW - Conductive bridge RAM (CBRAM)

KW - Cross-point array

KW - Select device

KW - Silicon oxide

KW - Storage class memory

KW - Volatile switching

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DO - 10.1109/TED.2017.2776085

M3 - Article

VL - 65

SP - 122

EP - 128

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ER -