Resistive switching device technology based on silicon oxide for improved on-off ratio-Part I: Memory devices

Alessandro Bricalli; Elia Ambrosi; Mario Laudato; Marcos Maestro; Rosana Rodriguez; Daniele Ielmini

doi:10.1109/TED.2017.2777986

Resistive switching device technology based on silicon oxide for improved on-off ratio-Part I: Memory devices

Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

31 Citations (Scopus)

Abstract

© 2018 Institute of Electrical and Electronics Engineers Inc. All rights reserved. Resistiveswitchingmemory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressedby enlarging the resistancewindowbetween lowresistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs.

Original language	English
Pages (from-to)	115-121
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	1
DOIs	https://doi.org/10.1109/TED.2017.2777986
Publication status	Published - 1 Jan 2018

Keywords

Cross point array
Memory reliability
Nonvolatile memory technology
Resistive switching memory (RRAM)
Silicon oxide
Storage class memory (SCM)

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title = "Resistive switching device technology based on silicon oxide for improved on-off ratio-Part I: Memory devices",

abstract = "{\textcopyright} 2018 Institute of Electrical and Electronics Engineers Inc. All rights reserved. Resistiveswitchingmemory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressedby enlarging the resistancewindowbetween lowresistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs.",

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author = "Alessandro Bricalli and Elia Ambrosi and Mario Laudato and Marcos Maestro and Rosana Rodriguez and Daniele Ielmini",

year = "2018",

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doi = "10.1109/TED.2017.2777986",

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Resistive switching device technology based on silicon oxide for improved on-off ratio-Part I: Memory devices. / Bricalli, Alessandro; Ambrosi, Elia; Laudato, Mario; Maestro, Marcos; Rodriguez, Rosana; Ielmini, Daniele.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 1, 01.01.2018, p. 115-121.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Resistive switching device technology based on silicon oxide for improved on-off ratio-Part I: Memory devices

AU - Bricalli, Alessandro

AU - Ambrosi, Elia

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AU - Maestro, Marcos

AU - Rodriguez, Rosana

AU - Ielmini, Daniele

PY - 2018/1/1

Y1 - 2018/1/1

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AB - © 2018 Institute of Electrical and Electronics Engineers Inc. All rights reserved. Resistiveswitchingmemory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressedby enlarging the resistancewindowbetween lowresistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs.

KW - Cross point array

KW - Memory reliability

KW - Nonvolatile memory technology

KW - Resistive switching memory (RRAM)

KW - Silicon oxide

KW - Storage class memory (SCM)

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DO - 10.1109/TED.2017.2777986

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