Resistive switching device technology based on silicon oxide for improved on-off ratio-Part I: Memory devices

Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini

Research output: Contribution to journalArticleResearchpeer-review

39 Citations (Scopus)

Abstract

© 2018 Institute of Electrical and Electronics Engineers Inc. All rights reserved. Resistiveswitchingmemory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressedby enlarging the resistancewindowbetween lowresistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs.
Original languageEnglish
Pages (from-to)115-121
JournalIEEE Transactions on Electron Devices
Volume65
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

Keywords

  • Cross point array
  • Memory reliability
  • Nonvolatile memory technology
  • Resistive switching memory (RRAM)
  • Silicon oxide
  • Storage class memory (SCM)

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