Reset statistics of nio-based resistive switching memories

Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, Jordi Suñé

Research output: Contribution to journalArticleResearchpeer-review

62 Citations (Scopus)

Abstract

In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of both V\rm reset and I\rm reset cumulative distributions increase linearly with 1/R \rm on. The value of Vrm reset63% is roughly independent of R \rm on while I reset}63\% increases with 1/R\rm on. Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement. © 2006 IEEE.
Original languageEnglish
Article number6012509
Pages (from-to)1570-1572
JournalIEEE Electron Device Letters
Volume32
Issue number11
DOIs
Publication statusPublished - 1 Nov 2011

Keywords

  • Reset statistics
  • Resistive random access memory (RRAM)

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