In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of both V\rm reset and I\rm reset cumulative distributions increase linearly with 1/R \rm on. The value of Vrm reset63% is roughly independent of R \rm on while I reset}63\% increases with 1/R\rm on. Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement. © 2006 IEEE.
- Reset statistics
- Resistive random access memory (RRAM)